US-based Efficient Power Conversion (EPC), which supplies gallium nitride (GaN) power transistors and ICs, has introduced its EPC2367 100 V eGaN field-effect transistors (FET).
Designed for 48 V intermediate voltage bus architectures, the EPC2367 reduces power loss, increasing efficiency and enabling more compact and cost-effective designs.
Advantages of the EPC2367 include a compact 3.3 mm × 3.3 mm QFN package, reducing PCB space and enhancing thermal performance, as well as ultra-low on-resistance (RDS(on)) of 1.2 mΩ, an improvement over previous-generation devices of around 30%.
The FET operates cooler under load, improving system reliability and enabling higher power densities. It also delivers four times the thermal cycling capability compared to previous GaN generations. In a 1 MHz, 1.25 kW system, the EPC2367 reduces power losses while achieving 1.25 times the output power compared to previous GaN and Si MOSFET alternatives.
The EPC2367 GaN FET is featured in the EPC90164 development board, a half bridge designed for 80 V maximum operating voltage and 35 A maximum output current. The board is designed to simplify the evaluation process for power systems designers to speed their product’s time to market. The 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
“The EPC2367 advances GaN technology with ultra-low on-resistance and superior thermal cycling, enabling engineers to boost efficiency and power density in AI servers, robotics, and automotive systems,” said Alex Lidow, EPC CEO and co-founder.
Source: EPC
